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Ç¥ÁعøÈ£ TTAK.KO-10.0520 ±¸Ç¥ÁعøÈ£
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¿µ¹®Ç¥Áظí Guideline of On-wafer Measurement for Temperature Characteristics of Semiconductor Electronic Devices
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¿µ¹®³»¿ë¿ä¾à One purpose of this standard is to standardize temperature- dependent data in
datasheets of products and measurement methods to compare temperature
characteristics of electronic semiconductor devices. Eventually this standard is to
select the right wanted product from measured data by the same measurement
conditions. When a bias supplied to activate devices, electronic semiconductor
devices show temperature- dependent characteristics from thermal effect. So, it is
required to measure temperature- dependent performances of devices to analyze and
modeling them. The device parameter which make a mainly effect on the temperature
characteristics of devices is emitter- base junction temperature or channel temperature.
It is set by three parameters that are the thermal impedance, the ambient temperature,
and the applied DC power.
Though many researchers measure temperature characteristics of electronic
semiconductor devices, they use different measurement system and measurement
conditions. There were differences in measurement temperature, temperature rising
time, temperature duration time, temperature falling time, etc.
Therefore, it is difficult to select the right wanted product from measured data and to
compare performances.
This standard is issued to present the same on- wafer measurement conditions and
to compare temperature characteristics between their performances of some papers,
products, etc.
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