Ç¥ÁØÈ­ Âü¿©¾È³»

TTAÀÇ Ç¥ÁØÇöȲ

Ȩ > Ç¥ÁØÈ­ °³¿ä > TTAÀÇ Ç¥ÁØÇöȲ

Ç¥ÁعøÈ£ TTAK.KO-10.0828 ±¸Ç¥ÁعøÈ£
Á¦°³Á¤ÀÏ 2015-12-16 ÃÑÆäÀÌÁö 25
ÇѱÛÇ¥Áظí Àü·Â¹ÝµµÃ¼ Æ®·£Áö½ºÅÍÀÇ ´ÙÀ̳ª¹Í ¿Â-ÀúÇ× ÃøÁ¤ ¹æ¹ý
¿µ¹®Ç¥Áظí Measuring Method for Dynamic On-Resistance of Power Semiconductor Transistors
Çѱ۳»¿ë¿ä¾à º» Ç¥ÁØÀÇ ÁÖ¿ä ³»¿ëÀ¸·Î Ç¥ÁØ ³»¿¡¼­ »ç¿ëµÇ´Â ¿ë¾î¸¦ Á¤ÀÇÇÏ°í Àü·Â¹ÝµµÃ¼ Æ®·£Áö½ºÅÍÀÇ ´ÙÀ̳ª¹Í ¿Â-ÀúÇ׿¡ ´ëÇÑ ÃøÁ¤ ¹æ¹ýÀ» ¼³¸íÇÑ´Ù. Àü·Â¹ÝµµÃ¼ Æ®·£Áö½ºÅÍÀÇ ´ÙÀ̳ª¹Í ¿Â-ÀúÇ×Àº ½ºÀ§Äª ¼Õ½Ç°ú ¹ÐÁ¢ÇÑ °ü°è°¡ ÀÖ´Â °ÍÀ¸·Î º» Ç¥ÁØÀº Àü·Â¹ÝµµÃ¼ Æ®·£Áö½ºÅÍ Áß¿¡¼­ Si(Silicon, ½Ç¸®ÄÜ) ±â¹ÝÀÇ Àü·Â¹ÝµµÃ¼ Æ®·£Áö½ºÅÍ¿¡ ±¹ÇÑÇÏÁö ¾Ê°í GaN(Gallium Nitride, ÁúÈ­°¥·ý) ¹× SiC(Silicon Carbide, ½Ç¸®ÄÜ Ä«¹ÙÀ̵å) ±â¹ÝÀÇ Àü·Â¹ÝµµÃ¼ Æ®·£Áö½ºÅÍ¿¡µµ Àû¿ëÀÌ °¡´ÉÇÏ´Ù.
¿µ¹®³»¿ë¿ä¾à The standard includes the definition of the using terminologies and measuring parameters of the dynamic on-resistance of the power semiconductor transistors in order to compare performance with other power semiconductor transistors. It is also applicable to GaN and SiC-based power semiconductor transistors including Si-based power semiconductor transistors.
±¹Á¦Ç¥ÁØ
°ü·ÃÆÄÀÏ TTAK.KO-10.0828.pdf TTAK.KO-10.0828.pdf            

ÀÌÀü
Ȧ·Î±×·¥ ±¤ÇÐ ¼ÒÀÚÀÇ È¸Àý È¿À² ÃøÁ¤ Áöħ
´ÙÀ½
½Ç°¨ µðÁöÅÐ ÈÞ¸Õ Ç°ÁúÆò°¡ ÇÁ·¹ÀÓ¿öÅ© - Á¦1ºÎ: Æò°¡ ¾ÆÅ°ÅØó¿Í Áú¹® ¸ñ·Ï