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Ç¥ÁعøÈ£ | TTAK.KO-10.0520 | ±¸Ç¥ÁعøÈ£ | |
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Á¦°³Á¤ÀÏ | 2011-12-21 | ÃÑÆäÀÌÁö | 22 |
ÇѱÛÇ¥Áظí | ¹ÝµµÃ¼ ÀüÀÚ¼ÒÀÚÀÇ ¿Â¿þÀÌÆÛ ¿ÂµµÆ¯¼º ÃøÁ¤ Áöħ | ||
¿µ¹®Ç¥Áظí | Guideline of On-wafer Measurement for Temperature Characteristics of Semiconductor Electronic Devices | ||
Çѱ۳»¿ë¿ä¾à | º» Ç¥ÁØÀº ¹ÝµµÃ¼ ÀüÀÚ¼ÒÀÚ ¹× À̸¦ ÀÌ¿ëÇÑ ÁýÀûȸ·ÎÀÇ ¿Âµµ Ư¼ºÀ» ºñ±³ÇÏ´Â ÃøÁ¤ Á¶
°ÇÀ» Ç¥ÁØÈÇÏ¿© »óÈ£ ºñ±³¸¦ ÅëÇÑ ºÎÇ° ¼±Åÿ¡ µµ¿òÀ» ÁÖ´Â °ÍÀÌ´Ù. ¹ÝµµÃ¼ ÀüÀÚ¼ÒÀÚ´Â µ¿ÀÛÀ» À§ÇØ Àü¿øÀÌ Àΰ¡µÊ¿¡ µû¶ó ¿ È¿°ú (Thermal Effect)·Î ÀÎÇÑ ¼ÒÀÚ Æ¯¼ºÀÇ º¯È °¡ ³ªÅ¸³´Ù. µû¶ó¼, ¼ÒÀÚÀÇ ¿Âµµ Ư¼º¿¡ ´ëÇÑ Á¤È®ÇÑ ºÐ¼® ¹× ¸ðµ¨¸µÀÌ ÇÊ¿äÇϸç À̸¦ À§ÇÏ¿© ¼ÒÀÚÀÇ ¿Âµµ Ư¼ºÀ» Æò°¡Çϱâ À§ÇÑ ÃøÁ¤À» ÇÏ°Ô µÈ´Ù. ¼ÒÀÚÀÇ ¿Âµµ Ư¼ºÀ» °áÁ¤ ÇÏ´Â ¼ÒÀÚ Æ¯¼º °ªÀº Á¤ ¹æÇâ Àü¾ÐÀÌ °É¸®´Â ¼ÒÀÚÀÇ Á¢ÇÕ È¤Àº ä³ÎÀÇ ¿ÂµµÀ̸ç ÀÌ Æ¯ ¼º °ªÀº ¼ÒÀÚÀÇ ¿Àû ÀúÇ× (Thermal Resistance)°ú ¿ÜºÎ ¿Âµµ¿Í ¼ÒÀÚ¿¡ Àΰ¡µÇ´Â Àü·Â °ª°ú °ü°è µÈ´Ù. Áö±Ý±îÁö ¹ÝµµÃ¼ ÀüÀÚ¼ÒÀÚÀÇ ¿Âµµ Ư¼ºÀ» Æò°¡Çϱâ À§ÇÏ¿© ¸¹Àº ¿¬±¸°¡ ÁøÇàµÇ¾úÀ¸³ª °¢ ¿¬±¸ÀÚ ¹× »ê¾÷ü¿¡¼ »ç¿ëÇÏ´Â °èÃø±âÀÇ ¼º´É°ú ÃøÁ¤ ȯ°æÀÇ Â÷ÀÌ·Î ÀÎÇÏ¿© ¿ÜºÎ¿Âµµ, ¿Âµµ »ó½Â ½Ã°£, ¿Âµµ À¯Áö ½Ã°£, ¿Âµµ ÇÏ° ½Ã°£ µîÀÌ ÃµÂ÷¸¸º°À̸ç ÃøÁ¤ Á¶°ÇÀÌ Æ¯º°È÷ Á¤ÇØÁ® ÀÖÁö ¾Ê±â ¶§¹®¿¡ ÃøÁ¤ Á¶°ÇÀÌ ´Ù¸£°í ÀÌ·Î ÀÎÇÑ ¼ÒÀÚ ¹× ÁýÀûȸ·ÎÀÇ Æ¯¼ºÀ» »óÈ£ ºñ±³ÇÒ °æ¿ì Á¤È®ÇÑ ÆÇ´ÜÀ» Çϱ⠾î·Á¿î °Ô Çö½ÇÀÌ´Ù. ÀÌ·¯ÇÑ ¹®Á¦Á¡À» ÇØ°áÇϱâ À§ÇØ ¹ÝµµÃ¼ ÀüÀÚ¼ÒÀÚÀÇ ¿Â¿þÀÌÆÛ (on- wafer) ¿Âµµ Ư¼ºÀ» »ç¿ëÀÚ°¡ »óÈ£ ºñ±³ÇÏ°í ¼±ÅÃÇÒ ¼ö ÀÖµµ·Ï Çϱâ À§ÇÏ¿© º» Ç¥ÁØÀ» ÅëÇؼ ÃøÁ¤ ¹æ¹ýÀÇ °¡ÀÌµå ¶ó ÀÎÀ» Á¦°øÇÏ°íÀÚ ÇÑ´Ù. |
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¿µ¹®³»¿ë¿ä¾à | One purpose of this standard is to standardize temperature- dependent data in
datasheets of products and measurement methods to compare temperature characteristics of electronic semiconductor devices. Eventually this standard is to select the right wanted product from measured data by the same measurement conditions. When a bias supplied to activate devices, electronic semiconductor devices show temperature- dependent characteristics from thermal effect. So, it is required to measure temperature- dependent performances of devices to analyze and modeling them. The device parameter which make a mainly effect on the temperature characteristics of devices is emitter- base junction temperature or channel temperature. It is set by three parameters that are the thermal impedance, the ambient temperature, and the applied DC power. Though many researchers measure temperature characteristics of electronic semiconductor devices, they use different measurement system and measurement conditions. There were differences in measurement temperature, temperature rising time, temperature duration time, temperature falling time, etc. Therefore, it is difficult to select the right wanted product from measured data and to compare performances. This standard is issued to present the same on- wafer measurement conditions and to compare temperature characteristics between their performances of some papers, products, etc. |
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