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¿µ¹®Ç¥Áظí Measurement Guideline for Static State Characteristics of Power Switching Devices
Çѱ۳»¿ë¿ä¾à Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚÀÇ Á¤Àû »óÅÂÀÇ Æ¯¼ºÀ» ÃøÁ¤Çϱâ À§ÇÑ ¹æ¹ýÀº ÀϹÝÀûÀ¸·Î ¾Ë·ÁÁø
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µÇ¾îÀÖ´Â ±î´ßÀ¸·Î »ç¿ëÀÚ°¡ Á¦Ç°À» ºñ±³¼±ÅÃÀÌ °¡´ÉÇϵµ·Ï Ư¼ºÀ» ÆÇ´ÜÇϱâ À§ÇÑ ÃÖ¼Ò
ÇÑÀÇ ÃøÁ¤ Ç׸ñ°ú Ç¥±â¹ýÀ» ÅëÀÏÇÏ¿© Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¸¦ »ç¿ëÇÏ´Â »ç¿ëÀÚ°¡ ¿©·¯ Á¦Ç°
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µµ È°¿ëÇϱâ À§ÇÔÀÌ´Ù. º» Ç¥ÁØÀÇ ÁÖ¿ä ³»¿ëÀº »ç¿ëµÇ´Â ¿ë¾î¸¦ Á¤ÀÇÇÏ°í Àü·Â ½ºÀ§Ä¡
¼ÒÀÚÀÇ Á¤Àû Ư¼º ÆĶó¹ÌÅÍÀÎ 4°³ÀÇ ÆĶó¹ÌÅÍ¿¡ ´ëÇÑ ÃøÁ¤¹æ¹ýÀ» ¼³¸íÇÑ´Ù. º» Ç¥ÁØÀº
½ºÀ§Ä¡ ¼ÒÀÚ Áß¿¡¼­ Àü°è È¿°ú Æ®·£Áö½ºÅÍ(Field Effect Transistor)¿¡ ±¹ÇÑÇÏ¿´À¸¸ç °øÇÌ
Çü(Depletion Mode ¶Ç´Â Normally- On) Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¿Í Áõ°¡Çü(Enhancement Mode
¶Ç´Â Normally- Off) Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¿¡ Àû¿ëÀÌ °¡´ÉÇÏ´Ù.
¿µ¹®³»¿ë¿ä¾à One purpose of this standard is to standardize measuring parameters, measuring
conditions and notations of parameters in datasheets of switching devices to compare
the different power switching devices. Eventually this standard is to select the right
wanted product from measured data by the same measurement conditions and
notations of the parameters of the switching devices. And another purpose is to use
for comparison of the different power switching devices between their performances
of some papers and products.
This standard is including definition of the using terms and four measuring
parameters of the static state characteristics of power switching devices in order to
compare between their performances and choose some power switching devices. It is
limited in the field effect transistors including normally- off and normally- on power
switching devices.
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