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¿µ¹®Ç¥Áظí Measurement Method for Reverse Recovery Time and Charge of Diode
Çѱ۳»¿ë¿ä¾à º» Ç¥ÁØÀÇ ÁÖ¿ä ³»¿ëÀº »ç¿ëµÇ´Â ¿ë¾î¸¦ Á¤ÀÇÇÏ°í ´ÙÀÌ¿ÀµåÀÇ ¿ª¹æÇâ ȸº¹ ½Ã°£ ¹× ¿ª¹æÇâ ȸº¹ ÀüÇÏ·®¿¡ ´ëÇÑ ÃøÁ¤ ¹æ¹ýÀ» Á¦½ÃÇÑ´Ù. ´ÙÀÌ¿ÀµåÀÇ ¿ª¹æÇâ ȸº¹ ½Ã°£°ú ¿ª¹æÇâ ȸº¹ ÀüÇÏ·®Àº ½ºÀ§Äª ¼Óµµ¿Í ¹ÐÁ¢ÇÑ °ü°è°¡ ÀÖ´Â °ÍÀ¸·Î º» Ç¥ÁØÀº ´ÙÀÌ¿Àµå Áß¿¡¼­ Si(Silicon, ½Ç¸®ÄÜ) ±â¹ÝÀÇ ´ÙÀÌ¿Àµå¿¡ ±¹ÇÑÇÏÁö ¾Ê°í GaN(Gallium Nitride, ÁúÈ­°¥·ý) ¹× SiC(Silicon Carbide, ½Ç¸®ÄÜÄ«¹ÙÀ̵å) ±â¹ÝÀÇ ´ÙÀÌ¿Àµå¿¡ Àû¿ëÀÌ °¡´ÉÇÏ´Ù.
¿µ¹®³»¿ë¿ä¾à This standard defines the using terms and the measuring methods of reverse recovery time and charges of diodes in order to compare performance with other diodes. It is applicable to the Si-based diodes, including GaN-based and SiC-based diodes.
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