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Á¦°³Á¤ÀÏ 2012-10-09 ÃÑÆäÀÌÁö 19
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¿µ¹®Ç¥Áظí Test Methods for the Stability of Oxide Semiconductor Thin Film Transistor - Part 1: Photo-Electrical Characteristics
Çѱ۳»¿ë¿ä¾à »êÈ­¹° ¹ÝµµÃ¼ ¹Ú¸· Æ®·£Áö½ºÅÍÀÇ ±¤ Àü±âÀû ½Å·Ú¼ºÀ» Æò°¡Çϱâ À§ÇÑ Ç׸ñ¿¡ ´ëÇÏ¿© Á¤ÀÇÇÏ°í ÀÖÀ¸¸ç °¢ Ç׸ñÀÌ Áö´Ñ Àǹ̿¡ ´ëÇÏ¿© ¼³¸íÇÑ´Ù. ¶ÇÇÑ, °¢ Ç׸ñÀ» ½ÇÁ¦·Î ÃøÁ¤ÇÏ´Â µµ±¸ ¹× ¹æ¹ý¿¡ ´ëÇÏ¿© Á¤ÀÇÇÑ´Ù.
¿µ¹®³»¿ë¿ä¾à This standard defines the evaluation items for evaluation for the stability of oxide semiconductor TFT under photo-electrical stress and explains the meaning of each item. Also, this standard defines the actual apparatus and methods for the each item.
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