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¿µ¹®Ç¥Áظí Measurement Guideline for Static State Characteristics of High-Power Switching Devices
Çѱ۳»¿ë¿ä¾à °íÀü·Â ½ºÀ§Ä¡ ¼ÒÀÚÀÇ Á¤Àû »óÅ Ư¼ºÀ» ÃøÁ¤Çϱâ À§ÇÑ ¹æ¹ýÀº ÀϹÝÀûÀ¸·Î ¾Ë·ÁÁø ¹æ¹ýÀ¸·Î »ç¿ëµÇ°í ÀÖÀ¸³ª ÃøÁ¤Ç׸ñÀÌ ¸Å¿ì ¸¹´Ù. ÀÌ¿¡ º» Ç¥ÁØÀº Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¸¦ Á¦ÀÛÇÏ¿© ÆǸÅÇÏ´Â Á¦Á¶¾÷ü¿¡¼­ Á¦°øÇÏ´Â µ¥ÀÌÅÍ ½ÃÆ®¿¡¼­ »ç¿ëµÇ´Â Ư¼º Ç׸ñ°ú Ç¥±â¹ýÀ» ÀÏÄ¡½ÃÅ°°í °íÀü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¿¡ ´ëÇÑ Æ¯¼º ºñ±³°¡ °¡´ÉÇϵµ·Ï ÇÏ´Â °ÍÀÌ ¸ñÀûÀÌ´Ù. ¾Æ¿ï·¯, °íÀü·Â ½ºÀ§Ä¡ ¼ÒÀÚÀÇ °íÀü¾Ð ¹× °íÀü·ù¿¡¼­ÀÇ Á¤Àû »óÅ Ư¼º ÃøÁ¤¿¡ À־ °èÃøÀåºñÀÇ º¸È£ ¹× ¾ÈÀüÀ» À§ÇÑ ÃøÁ¤ ¼Â¾÷À» ¼³¸íÇÑ´Ù. º» Ç¥ÁØÀÇ ÁÖ¿ä ³»¿ëÀº »ç¿ëµÇ´Â ¿ë¾î¸¦ Á¤ÀÇÇÏ°í Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚÀÇ Á¤Àû Ư¼º ÆĶó¹ÌÅÍÀÎ 4°³ÀÇ ÆĶó¹ÌÅÍ¿¡ ´ëÇÑ ÃøÁ¤¹æ¹ýÀ» ¼³¸íÇÑ´Ù. º» Ç¥ÁØÀº ½ºÀ§Ä¡ ¼ÒÀÚ Áß¿¡¼­ Àü°è È¿°ú Æ®·£Áö½ºÅÍ(Field Effect Transistor)¿¡ ±¹ÇÑÇÏ¿´À¸¸ç °øÇÌÇü(Depletion Mode ¶Ç´Â Normally-On) Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¿Í Áõ°¡Çü(Enhancement Mode ¶Ç´Â Normally-Off) Àü·Â ½ºÀ§Ä¡ ¼ÒÀÚ¿¡ Àû¿ëÀÌ °¡´ÉÇÏ´Ù.
¿µ¹®³»¿ë¿ä¾à The standard is to standardize measuring parameters, measuring conditions and notations of parameters in datasheets of high-power switching devices to compare the different power switching devices. Eventually this standard is to select the right wanted product from measured data by the same measurement conditions and notations of the parameters of the switching devices. And another purpose is to use for comparison of the different power switching devices between their performances of some papers and products. In addition, the measurement setups for the protection and safety of measuring instruments are described in measuring static state characteristics at high voltage and high current for high-power switch devices.
This standard is including definition of the using terms and four measuring parameters of the static state characteristics of high-power switching devices in order to compare between their performances and choose some power switching devices. It is limited in the field effect transistors including normally-off and normally-on power switching devices.
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